Study of the Optical Properties of Sn-doped Sb2S3 Thin Films

Abstract Sn doped Sb2S3 thin films have been deposited by single source vacuum thermal evaporation onto glass substrates at substrate temperature Ts= 240 °C. The optical constants were obtained from the analysis of the experimental recorded transmission and reflectance spectral data over the wavelength range 300–1800 nm. It has been found that the refractive index dispersion data obeyed the single oscillator of the Wemple-DiDomenico model. By using this model, the dispersion parameters and the high-frequency dielectric constant were determined. The electric free carrier susceptibility and the carrier concentration on the effective mass ratio were estimated according to the model of Spitzer and Fan.