The gate electrode dopant activation methods for semiconductor manufacturing

In one embodiment, the present invention generally provides a method for annealing a doped layer is deposited on the substrate. The method comprises the steps of depositing a polycrystalline layer on the surface of a substrate such as a gate oxide layer, the polycrystalline layer by implanting dopant into, and forming a polycrystalline layer doped . The method further includes a polycrystalline layer doped exposed to rapid thermal annealing, and a step to easily distribute the dopant throughout the polycrystalline layer. Thereafter, the method is to expose the polycrystalline layer doped with the laser annealing, a step of activating the top of the dopant in the polycrystalline layer. Laser annealing, the dopant, that coalesces atoms polycrystalline material into the crystal lattice. .The