MBE growth mechanism of ZnSe: growth rate and surface coverage

Abstract The growth rate and surface coverage as functions of growth temperature and molecular beam intensity for MBE growth of (100)ZnSe are examined by the model accounting for the precursor states and surface coverage. The calculated results on the growth rate are presented and the growth temperature and flux ratio dependence of growth rate is described. The calculated results on the surface coverage are also presented. It is found that the growth temperature should be chosen at around 360°C in order to achieve surface stoichiometry during MBE growth. The correlation between surface coverage and experimental RHEED patterns is also reported.