Design and fabrication of GaAs/AlGaAs single electron transistors based on in-plane Schottky gate control of 2DEG

Abstract A novel GaAs-based single electron transistor (SET) based on in-plane Schottky gate control of 2DEG is designed and fabricated to achieve SET operations at higher temperatures than split-gate devices. Coulomb oscillation is observed up to 20 K in the novel device.