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Acemap > Paper > MOVPE法による中間組成域n-InAlN/p-InGaNヘテロ接合の作製(薄膜プロセス・材料,一般)

MOVPE法による中間組成域n-InAlN/p-InGaNヘテロ接合の作製(薄膜プロセス・材料,一般)

2011 
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