Switching of tunnel magnetoresistance by domain wall motion in (Ga,Mn)As-based magnetic tunnel junctions

Switching of tunnel magnetoresistance in magnetic tunnel junctions (MTJs) has been achieved by magnetic domain wall motion in one of the electrodes. The fabricated devices have two (Ga,Mn)As-based MTJs with a common bottom (Ga,Mn)As electrode, in which the domain wall motion takes place both by magnetic field and by current. This configuration allows not only the observation of switching but also time-resolved detection of the position of the domain wall by the tunnel magnetoresistance.