Interfacial characteristics and dielectric properties of Ba0.65Sr0.35TiO3 thin films

Abstract Ba 0.65 Sr 0.35 TiO 3 (BST) thin films were deposited on Pt/Ti/SiO 2 /Si substrates by radio frequency magnetron sputtering technique. X-ray photoelectron spectroscopy (XPS) depth profiling data show that each element component of the BST film possesses a uniform distribution from the outermost surface to subsurface, but obvious Ti-rich is present to BST/Pt interface because Ti 4+ cations are partially reduced to form amorphous oxides such as TiO x ( x − 7  A/cm 2 at 1.23 V and lower than 5.66 × 10 − 6  A/cm 2 at 2.05 V as well as breakdown strength is above 3.01 × 10 5  V/cm.