CMOS image sensor and method for manufacturing the same

The invention as defined by relates to a CMOS image sensor and a method of manufacturing the same so as to improve the surface leakage characteristics of the image sensor by reducing the current of the photo diode by PDP ion implantation in the lower part of the side wall insulating film, the photodiode region and a transistor region and a semiconductor substrate having an active region, a first conductivity type first photodiode of the impurity region, the gate electrode the other side formed in the gate electrode formed via a gate insulating film on the active region and a transistor region of the gate electrode side a first conductivity type formed in the region the second impurity region, and the sidewall insulation films formed on both side surfaces of the gate electrode, the second conductivity type in a photodiode region of said gate electrode and the other side that is formed extending to a lower portion of the sidewall insulation film of claim 3 is characterized by configured by comprising an impurity region. An image sensor, a photodiode, a side wall insulating film, the leakage current