8OOOV lOOOA GATE TURN-OFF THYRISTOR WITH LOW ON-STATE VOLTAGE AND LOW SWITCHING LOSS

An 8000V 1000A gate turn-off thyristor has been developed. Low on-state voltage and low switching loss are realized with a combination of a PIN structure and a new ringed anode short structure. In particular, the PIN structure is fabricated by using both a diffusion technique and an epitaxial growth technique (l) .