Annealing and doping effects in layered In2Se3 compounds

Abstract Annealing treatments and doping effects in layered In 2 Se 3 compounds have been investigated by means of conductivity and Hall mobility measurements in the temperature range 5–300 K. The presence of a large number of intrinsic defects strongly affects the electrical properties of these compounds, and the influence of the post-preparation annealing on conductivity and anisotropy is analysed.