Bipolar Resistive Switching Characteristics in Flexible Pt/MZT/Al Memory and Ni/NbO 2 /Ni Selector Structure

The use of a threshold-switching Ni/NbO 2 /Ni device with a memory-switching Pt/magnesium zirconate titanate/Al device on a flexible substrate was proposed to suppress undesired sneak currents. The proposed flexible one selector and one resistor (1S1R) memory device exhibits a low operation voltage, good ON/OFF ratio of $10^{5}$ , uniform current distribution, excellent flexibility, and stable ${I}$ – ${V}$ curve at 85 °C. The good selection and memory properties of the flexible 1S1R memory device are highly promising for high-density and low-power flexible electronic applications.