Simulation of the Sample Alignment Process for the White Beam Tomography

Nowadays growth of synthetic crystals is a very prospective direction of research activity. However, it is well known that in synthesized crystals there are still many defects and the main idea is to synthesize crystal of ideal form and structure. But in purpose to remove defects first you have to characterize them. This paper describes the method for the characterization of such defects and mainly concentrates on the problem of sample alignment procedure, offering the way to avoid misalignments.