Raman scattering in diamond irradiated with high-energy xenon ions

Abstract Accumulation of radiation damage and associated mechanical stresses in diamonds irradiated with 167 MeV Xe ions to fluences 1.0 × 1010 ÷ 8.15 × 1014 cm−2 have been studied using confocal Raman spectroscopy. The spectra were measured in a backscattering geometry across the irradiated layer by scanning the edge of single crystalline synthetic samples with nitrogen concentration 3 ÷ 5 ppm. All spectra were recorded at room temperature. Parameters of the 1332 cm−1 first-order Raman line – the FWHM and peak position, studied as function of Xe ion fluence, were used to characterize the structural disorder and mechanical stress level.