Monolithic Ge/Si avalanche photodiode receiver for 10Gb/s 1.3μm application

Yimin Kang,M. Zadka,Stas Litski,Gadi Sarid,Michael T. Morse,Mario J. Paniccia,Ying-Hao Kuo,John E. Bowers,Andreas Beling,Han-Din Liu,Dion McIntosh,Jenna Campbell,Alexandre Pauchard

Monolithic Ge/Si avalanche photodiode receiver for 10Gb/s 1.3μm application

2008

Yimin Kang
M. Zadka
Stas Litski
Gadi Sarid
Michael T. Morse
Mario J. Paniccia
Ying-Hao Kuo
John E. Bowers
Andreas Beling
Han-Din Liu
Dion McIntosh
Jenna Campbell
Alexandre Pauchard

We have developed monolithically grown Ge/Si avalanche photodiodes (APDs) for high data rate and near infrared wavelength fiber communication systems. The surface illuminated APDs demonstrate gain-bandwidth of 153 GHz.

Keywords:

Avalanche photodiode
Optoelectronics
Dark current
Physics
Near-infrared spectroscopy
Optics
Quantum tunnelling
Wavelength
Silicon
Bandwidth (signal processing)
APDS
high data rate

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