Manufacturing method of a semiconductor device and semiconductor device as a web transistor which is fabricated on a structured STI region by a late Stegätzung

In the fabrication of complex semiconductor devices dimensional transistors are fabricated in conjunction with planar transistors on the basis of a replacement gate method, and self-aligned contact elements, in that the semiconductor strips are produced in an early manufacturing stage, ie in the formation of shallow grave insulations, wherein the final electrically effective height of the semiconductor fins in accordance with the providing self-aligned contact elements and during the replacement gate process is adjusted.