Effect of substrate temperature on structure and properties of ZnO:Ga thin films by pulsed laser deposition

Gallium doped zinc oxide(ZnO: Ga) thin films were deposited on quartz substrates by pulsed laser deposition.The effects of substrate temperature on the structure,surface morphology and photoelectric properties of the ZnO:Ga thin films were investigated.The obtained thin films possess a polycrystalline hexagonal wurtzite structure.With the increase of substrate temperature,the intensity of diffraction peaks increases significantly and the grain size increases.The lowest resistivity is 8.5×10–4 Ω·cm and the transmittance in the visible range is over 87% for the prepared ZnO:Ga thin films when the substrate temperature is 450 ℃.