Exceptionally linear and highly sensitive photo-induced unipolar inverter device

Oxide semiconductors are of particular interest in the field of integrated electronics due to their large-area fabrication, high uniformity, and superior performance. Here, we report an exceptionally sensitive photo-induced inverter device with high linearity based on the unipolar n-type channel material amorphous silicon indium zinc oxide (a-SIZO). The field-effect transistor (FET) based on a-SIZO exhibits maximum mobility of 9.8 cm2/Vs at $\text{V}_{\mathrm{ D}}$ of 5 V, high on/off ratio of $\sim 10^{6}$ , and stable threshold voltage ( $\text{V}_{\mathrm{ Th}}$ ) of −0.35 V. Additionally, the optical properties of the proposed FET include excellent $\text{V}_{\mathrm{ Th}}$ shift and photocurrent ( $\text{I}_{\mathrm{ photo}}$ ) with high linearity under various red-light illumination. The proposed enhancement-load type inverter device shows reliable electrical and optical characteristics with an inverter gain of 0.7 at $\text{V}_{\mathrm{ DD}}$ of 1 V and linear photo-response in terms of inverter gain and voltage shift, demonstrating promising potential in the field of integrated electronics for optoelectronic applications.