STUDY OF CHARGE TRANSPORT IN NON-IRRADIATED AND IRRADIATED SILICON DETECTORS

Abstract The electrical characteristics of non-irradiated and irradiated n-type silicon detectors (p + –n–n + diode) are extracted by fitting a charge transport model to a set of experimental data obtained from the measurement of the current pulse response induced by α and β particles in non-irradiated and irradiated silicon detectors. The detectors have been irradiated either with ≈1 MeV neutrons up to a fluence of 11.2×10 13  n/cm 2 or with 24 GeV/ c protons up to a fluence of 10.6×10 13  p/cm 2 . After n to p-type inversion, a small junction on the p + side of the detector is introduced to fit the experimental data and therefore to account for the evolution of the electrical characteristics of the detectors with fluence.