Applications of Sparse and Compact Resist Modeling in Advanced Node Implant Layer

OPC model, basically consisting of optical and resist model, has been regarded as an effective and popular resolution enhancement technique. With the layout of integrated circuit to more advanced technology node and more complicated design, resist model has been evolving from traditional sparse simulation model to compact simulation model due to powerful computation function. As the pattern design of implant layer is relatively simpler compared with AA/PO, sparse VT5 model and compact CM1 model can still coexist for use with respective typical characteristic. Sparse VT5 model consume less runtime due to simpler function calculation. Compact CM1 model exhibits higher accuracy due to taking more items into account. A suitable model has to achieve good balance between the model accuracy and real runtime during mask tape-out. VT5 and CM1 are both calibrated in advanced node (28/14 nm) implant resist modeling, and systematic performance comparison between the two models are made from methodology, accuracy, stability and simulation runtime based on a design layout. CM1 model shows obvious advantages in lower node implant layer resist modeling. It provides good guidance for other implant layers' resist modeling with thick photoresist.