Excitonic localization at macrostep edges in AlGaN/AlGaN multiple quantum wells

Abstract Double peaks at wavelength of 276 and 290 nm are observed for AlGaN/AlGaN multiple quantum wells (MQWs). Cathodoluminescence (CL) mappings identify that the emission at 290 nm originates from the macrostep edges. Potential minima induced by local variation of QW thickness and Ga incorporation are found along the step edges, where quantum wires (QWRs) are formed. The lateral advance rate of macrostep (∼310 nm/h) is obtained by investigating the distribution of QWRs. Temperature-dependent CL spectrum suggest that thermal quenching for 290 nm emission is dramatically suppressed compared with that for conventional QWs emission, which shows excitonic localization characteristics of QWRs.