Low voltage high speed SiO/sub 2/AlGaN/AlLaO/sub 3/TaN memory with good retention

To improve trapping using deeper well AlGaN (chi=3.8eV), lower voltage drop in high-K AlLaO 3 barrier (k=23 ), and smaller erase current by large DeltaE C of AlLaO 3 /TaN, the SiO 2 /AlGaN/AlLaO 3 /TaN devices show good 85degC memory integrity of low plusmn10V 1ms P/E, large 3.9V initial DeltaV th and 2.4V extrapolated 10-year retention. A fast 100mus P/E of plusmn11V still gives 3.0V initial DeltaV th and 1.6V 10-year retention