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Development of Antimonide-Based Transistors
Development of Antimonide-Based Transistors
2017
Fujishiro Hiroki
Isono Kyosuke
Takahashi Takuto
Harada Yoshiaki
Oka Naoki
Takeuchi Jun
Fujisawa Yui
Fujikawa Sachie
Machida Ryuto
Watanabe Issei
Yamashita Yoshimi
Endoh Akira
Hara Shinsuke
Kasamatsu Akifumi
Keywords:
Antimonide
Transistor
Optoelectronics
Cutoff frequency
Materials science
High-electron-mobility transistor
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