Atomic Layer Deposition of NiO Films on Si(100) Using Cyclopentadienyl-Type Compounds and Ozone as Precursors

NiO films were grown on Si(100) by atomic layer deposition using Ni(Cp) 2 (Cp = cyclopentadienyl, C 5 H 5 ) or Ni(EtCp) 2 [EtCp = ethylcyclopentadienyl, (C 2 H 5 ) C 5 H 4 )] and ozone in the 150-300°C temperature range. The growth temperature dependence of structure, electronic density, and impurity levels for the prepared NiO films was studied using X-ray reflectivity, X-ray diffraction (XRD), Fourier transform infrared (FTIR) spectroscopy, time of flight-secondary ion mass spectroscopy (ToF-SIMS), and transmission electron microscopy. The behavior of films deposited using Ni(Cp) 2 and Ni(EtCp) 2 is compared and discussed. NiO films with good stoichiometry and low amounts of contaminants are obtained at a growth temperature (T g ) of 250°C or above. At a fixed T g , the growth rate for NiO films deposited using Ni(Cp) 2 is higher than the one of films deposited using Ni(EtCp) 2 . Furthermore, the growth rate for NiO deposited using Ni(Cp) 2 at T g = 150°C is 0.32 nm/cycle and decreases substantially in films deposited at higher temperatures. The electronic density of NiO films deposited at 300°C is close to the one of bulk NiO (1.83 e - /A 3 ). According to XRD and FTIR results, films deposited at T g ≥ 200°C have a simple cubic polycrystalline structure. Impurities in NiO films decrease with increasing T g , as detected by ToF-SIMS.