Thermal processing of strained GaInAs/GaAs high hole mobility transistor structures

We have studied the resistance to thermal processing of a realistic strained‐layer device structure: a GaAs/GaInAs p‐type modulation‐doped field‐effect transistor layer. The integrity of the structure was monitored using the photoluminescence from the strained quantum well in the active region of the structure. No evidence of mixing or strain relaxation was observed when samples were annealed at 750 °C for 5 h. At higher temperatures, 900 °C and above, mixing is observed and values for the interdiffusion constants and the activation energy obtained.