Synthesis of an LED structure on the \(\left( {11\bar 20} \right)\) and (0001) faces of mesa stripes grown by selective-area epitaxy

The influence of the carrier-gas type on the character of formation of p-GaN layers on the faces (0001), \(\left( {11\bar 20} \right)\), and \(\left( {11\bar 22} \right)\) of a mesa-stripe structure, formed by the selective-area epitaxy method. A light-emission diode having a rectangular cross section with an active region made of InGaN/GaN quantum wells was formed on the (0001) and \(\left( {11\bar 20} \right)\) faces of the mesa stripe structure. LED prototypes on free GaN stripes detached from the substrate were created.