Studies on Small Charge Packet Transport in High-Resistivity Fully Depleted CCDs

In this article, we present the measurements and a physically motivated model for the transport and diffusion of small charge packets in the bulk of thick high-resistivity charge-coupled devices (CCDs). We use a novel technique to measure the lateral spread of the charge as a function of the ionization depth in the silicon bulk. Measurements from CCDs, currently being used in several scientific instruments, are shown and used to validate the new mathematical algorithm that extends the current modeling of the diffusion of the charge carriers in silicon before being collected by the pixel potential wells.