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Recombination centers, carrier lifetime and electrical characteristics in electron irradiated power semiconductor devices
Recombination centers, carrier lifetime and electrical characteristics in electron irradiated power semiconductor devices
1986
P.G. Fuochi
P.G. Di Marco
Giacomo M. Bisio
E. Di. Zitti
B. Passerini
S. Tenconi
M. Zambelli
Keywords:
Semiconductor device
Irradiation
Carrier lifetime
Power electronics
Charge carrier
Electron
Nuclear magnetic resonance
Electron beam processing
Physics
Recombination
Optoelectronics
Electrical engineering
Correction
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