High performance Ga 2 O 3 (Gd 2 O 3 )/Ge MOS devices without interfacial layers

Excellent electrical performances have been demonstrated for the MOSCAPs and MOSFETs using Ga 2 O 3 (Gd 2 O 3 ) gate dielectrics deposited at room temperature on Ge(100) without employing any interfacial layers. In this work, we report a very low interfacial density of state (D it ) of ∼2×10 11 cm −2 eV −1 , a low leakage current density (J g ) of ∼10 −9 A/cm 2 , well-behaved capacitance-voltage (C-V) characteristics including an excellent quasi-static C-V curve along with a high efficiency of 80% for the Fermi-level movement near the mid-gap. In addition, a high saturation drain current and a high transconductance of 496µA/µm and 178µS/µm, respectively, for the 1µm-gate-length device have been obtained as well.