Small Signal Modeling of Cylindrical/Surrounding Gate MOSFET for RF Application Incorporating Fringing Effect

In this paper, a small signal equivalent model of charge plasma based cylindrical/surrounding gate MOSFET incorporating fringing capacitances is proposed. The outer $(\mathrm{C}_\text{of})$ and inner $(\mathrm{C}_\text{if})$ fringing capacitances of SRG MOSFETs are considered here. Low frequency admittance parameters of the device have been derived from the circuit and different circuit components have been expressed in terms of the real and imaginary part of the admittance parameters. Also, important RF parameters such as cut off frequency fr, maximum frequency $\mathrm{f}_{\max}$ also have been deduced.