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High performance 50 nm In0.65Al0.35As/In0.75Ga0.25As Metamorphic HEMTs with Si3N4 passivation on thin InGaAs/InP layer
High performance 50 nm In0.65Al0.35As/In0.75Ga0.25As Metamorphic HEMTs with Si3N4 passivation on thin InGaAs/InP layer
2007
Seong-Jin Yeon
Jeongmin Seong
Myung Hwan Park
Kwang-Seok Seo
Keywords:
Metamorphic rock
Passivation
Analytical chemistry
Materials science
Optoelectronics
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