RANGE DISTRIBUTION OF 31P IONS IMPLANTED INTO GE

Abstract We have measured the depth distribution of 31 P ions implanted at 50 keV to a fluence of 7 × 10 15 /cm 2 into Ge using two methods: first, the surface-sensitive particle-induced X-ray excitation (PIXE) technique utilizing ion-induced X-ray emission has been exploited for absolute non-destructive analysis; second, secondary ion mass spectrometry has been performed to obtain the relative depth distribution for the same target.