Profile distortion in SIMS

Abstract A short survey is given of the relation between depth profile distortions observed in Secondary Ion Mass Spectrometry (SIMS) and the basic interaction process of energetic particles with a solid material. An experimental method proposed in the literature to determine the width of the cascade mixing layer is discussed and it is shown that for interpretation of the results matrix effects must be taken into account. The influence of primary ion implantation on shallow depth profiles is demonstrated and finally a mechanism is proposed which relates profile distortions to the existence of a chemically modified surface layer after oxygen ion bombardment.