Reprint of “In-situ luminescence studies of silica glass during low energy H+, He+ and O+ irradiation”

Abstract Silica glass can be used as optical windows of nuclear facilities, optical fibers, and different electronic components in high radiation level environments. The study of structural changes and other effects created by ion irradiation in silica glass is important both for the performance study in above applications and the mechanical study of ion implantation modifications of silica for manufacture advanced materials. A low-energy ion beam induced luminescence (IBIL) set-up was developed at the 200 kV Ion Implanter of Beijing Normal University to measure the dynamic process involved in the damage creation of different materials. In-situ luminescence measurements were performed on silica glasses under the irradiation of 40 keV, 100 keV, 180 keV H + , He + and 100 keV, 180 keV O + at room temperature. The evolution of two main emission bands under 100 keV H + , He + , and O + irradiation was discussed. The IBIL kinetics studied in this work was different to that observed for MeV-ions. The saturated luminescence induced by H + , He + presented almost linear relationship with electronic energy deposition of incident ions. The roles of electronic and nuclear stopping power at different ion energies were discussed to explore the origin of luminescence. Ex-situ optical absorption spectra were measured to monitor optical properties and point defects concentration evolution with H + and O + fluence.