Eco-Friendly, Low-temperature Solution-processed InO/ A1oThin-film Transistor with Li - incorporation

In this work, we investigate an eco-friendly route of fabricating solution-processed thin-film transistors (TFTs). With Li incorporation in the indium oxide (InO) semiconductor layer, the annealing temperature can be lowered to 200°C. The combination with a solution processed high-k aluminum oxide (A1O) dielectric layer, produces a TFT field effect mobility with average value of 20.5 cm2·V−1·s−1 from 30 samples, which is a promising result for future applications.