Growth and characterization of strain compensated Si1−x−y epitaxial layers

Abstract We have fabricated partially strain compensated, epitaxial layers of the ternary alloy SiGeC on (001) Si substrates. Using a rapid thermal chemical vapor deposition reactor working at reduced pressure and at 650°C, we obtained strained SiGe layers which can be compensated for zero net strain when substitutional C is added during the layer growth. These solid solution layers, characterized essentially by optical microscopy and X-ray diffraction, are partially strain compensated because the misfit dislocations observed on fully strained layers are no longer present with the addition of a small percentage of C.