(110) channel, SiON gate-dielectric PMOS with record high I on =1 mA/μm through channel stress and source drain external resistance (R ext ) engineering
2007
This paper presents for the first time (110) PMOS characteristics without R ext degradation, allowing investigation of fundamental mobility and demonstration of drive current I on in excess of 1mA/mum at I off =100 nA/μm.
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