Electron irradiation of near-UV GaN/InGaN light emitting diodes

Irradiation with 6 MeV electrons of near-UV (peak wavelength 385–390 nm) multi-quantum-well (MQW) GaN/InGaN light emitting diodes (LEDs) causes an increase in density of deep electron traps near Ec−0.8 and Ec−1 eV, and correlates to a 90% decrease of electroluminescence (EL) efficiency after a fluence of 1.1 × 1016 cm−2. The likely origin of the EL efficiency decrease is this increase in concentration of the Ec −0.8 eV and Ec −1 eV traps.