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AlGaNチャネルHEMTの高温特性評価(化合物半導体デバイス及び超高周波デバイス/一般)
AlGaNチャネルHEMTの高温特性評価(化合物半導体デバイス及び超高周波デバイス/一般)
2012
maiko hatano
jun yamazaki
nori sei ya fune
hirokuni tokuda
yosiyuki yamamoto
sin hasimoto
kati si akita
masaaki katurahara
Keywords:
Electronic engineering
Materials science
High-electron-mobility transistor
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