Study on Sensing Properties of Ion-Sensitive Field-Effect-Transistors Fabricated With Stack Sensing Membranes
2016
This letter addresses the characteristics of biosensor made of ion-sensitive field-effect-transistors (ISFETs) with stacked 3-aminopropyltriethoxysilane/SiO 2 sensing membranes. These devices exhibit higher sensitivity, lower hysteresis, and lower drift characteristics as compared with the conventional ones made with a simple layer of oxide. Much improved performance makes ISFETs a favorable choice for future bio-sensing applications.
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