Hybrid carbon nanotube-silicon complementary metal oxide semiconductor circuits

A hybrid technology is presented that combines carbon nanotube field-effect transistors (CNFET) with conventional, silicon-based complementary metal oxide semiconductor (CMOS) technology. The fabrication involves the chemical vapor deposition growth and optical characterization of carbon nanotubes, which are then transferred with lithographic precision onto a commercially fabricated CMOS substrate. In this manner, CNFET devices are fabricated on top of the interconnection network of the CMOS chip, providing a three-dimensional integration of active devices, “sandwiching” wiring, and passives. As a demonstration of this approach, a simple hybrid CNFET/CMOS inverter is fabricated and tested.