Old Web
English
Sign In
Acemap
>
Paper
>
Annihilation behavior of void defects in nitrogen doped Cz-Si wafers by ultrahigh-temperature RTP
Annihilation behavior of void defects in nitrogen doped Cz-Si wafers by ultrahigh-temperature RTP
2016
Haruo Sudo
Koji Araki
Tatsuhiko Aoki
Takeshi Senda
Susumu Maeda
Keywords:
Radiochemistry
Nitrogen
Doping
Annihilation
Void (astronomy)
Wafer
Materials science
Optoelectronics
nitrogen doped
Correction
Source
Cite
Save
Machine Reading By IdeaReader
0
References
0
Citations
NaN
KQI
[]