W-band on wafer measurement of active and passive devices

In this paper we have presented a study of the effect of back-thinning standard CPW wafers and the influence on measured W-band performance. Improvements in measured insertion loss and substrate cross-talk have been observed, and a study of the effect of a quartz spacer layer has been made. Additionally, the improvement in measured performance of active devices after wafer thinning has also been shown, and further progress is expected in this area.