THE FEATURES OF HOLE RESONANT TUNNELING IN Sil,,Ge,/Si DOUBLE BARRIER STRUCTURES

Both temperature dependent measurements and theoretical calculations have been used to study the properties of hole resonant tunneling in SiGdSi double barrier quantum well structures. The calculation results are obtained using the principles proposed in our recent study on the origin of resonant tunneling and it$ temperature dependence. Our calculations show that at current resonance, the tunneling level can be higher or lower than the quasi Fermi-level in the spacer. This is an important factor which determines the temperature dependence of resonant tunneling transport. The distinctly different features of the first and second resonances can be understood, by considering the different population of the hh and lh bands in the spacer region and the temperature dependences of Ef and effective masses.