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Fabrication of InGaAs channel multi-gate MOSFET’s with MOVPE regrown source/drain
Fabrication of InGaAs channel multi-gate MOSFET’s with MOVPE regrown source/drain
2015
Kinoshita Haruki
Netsu Seiko
Mishima Yuichi
Kanazawa Toru
Miyamoto Yasuyuki
Keywords:
Multigate device
Metalorganic vapour phase epitaxy
MOSFET
Electronic engineering
Materials science
Communication channel
Optoelectronics
Fabrication
Correction
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