Investigation of blistering process in H-implanted semipolar GaN

We study the blistering process in H-implanted semipolar ( 1 1 2 ¯ 2 ) GaN. Compared with the (0 0 0 1) orientation, the blistering kinetics of ( 1 1 2 ¯ 2 ) GaN revealed lower activation energies of 0.27 and 0.92 eV in the higher- and lower-temperature regimes, respectively. H-induced internal pressure and stress in the surface blisters were found to be dependent on the crystal orientation of GaN. Based on this study, a physical mechanism for the blistering of ( 1 1 2 ¯ 2 ) GaN has been presented.