Power mos transistor array

The invention discloses a power MOS transistor array. The power MOS transistor array consists of a plurality of cell structures. Each cell structure comprises a front channel active device and a rear channel metal connection layer, wherein the rear channel metal connection layer includes holes, lower layer metal, through holes between metals and top layer metal, the holes are connected with a source electrode, a drain electrode, a polycrystalline silicon grid electrode of the active device and the lower layer metal, the through holes between the metals are connected with the lower layer metal and the top layer metal, and the holes are groove type long-strip-shaped holes. According to the power MOS transistor array, parasitic resistance brought by metal wiring is reduced by optimization of rear channel metal wiring design and top layer metal manufacturing process, thereby reducing on resistance of the overall transistor array, enabling the power MOS transistor array to obtain large drive current, and improving a drive capability.