Fabrication and characterization of 4H—SiC bipolar junction transistor with double base epilayer

In this paper we report on a novel structure of a 4H—SiC bipolar junction transistor with a double base epilayer that is continuously grown. The measured dc common-emitter current gain is 16.8 at IC = 28.6 mA (JC = 183.4 A/cm2), and it increases with the collector current density increasing. The specific on-state resistance (Rsp−on) is 32.3 mΩ·cm2 and the open-base breakdown voltage reaches 410 V. The emitter N-type specific contact resistance and N+ emitter layer sheet resistance are 1.7×10−3 Ω·cm2 and 150 Ω/□, respectively.