Evaluation of critical stress intensity for crack initiation and rising R-curve behavior in wurtzitic AlN film grown on (001)Si substrate

Abstract Raman spectroscopy and scanning electron microscopy, combined with the Vickers indentation method, were applied to analyze the fracture behavior of a thin (i.e., 1 μm in thickness) aluminum nitride (AlN) film deposited on a (001)Si substrate. A series of indentations were introduced in the AlN/Si system with applying gradually increasing loads, and the stress intensity factor, K R , stored at the tip of cracks propagated from the indentation corners was determined according to the shift of selected Raman bands from wurtzitic AlN in response to the crack-tip residual stress field. A steeply rising crack resistance curve was found in the AlN film, starting from an intrinsic toughness, K I0  = 0.6 MPa m 1/2 , for crack initiation up to K R  ≅ 5 MPa m 1/2 (at a crack length of ~ 120 μm). Such rising R-curve behavior was attributed to the presence of a compressive residual stress field stored in the AlN film. The results obtained by Raman spectroscopy were consistently supported by direct crack opening displacement measurements in a scanning electron microscope.