Atomic layer deposition method for a metal gate electrode

Provided on a doped TiN / or the apparatus and method of Si, Al, Ga, Ge, In and / or Hf and the TaN film. Such films can be used as high-k dielectric capping layer, the PMOS work function layer, an aluminum barrier layer and / or fluorine barrier. These TiSiN, TaSiN, TiAlN, TaAlN, TiGaN, TaGaN, TiGeN, TaGeN, TiInN, TaInN, TiHfN TaHfN or TiN films available for use and / or TaN film at Conventionally, TiN or the membrane may be combined and / or used TaN .