Model-based mask verification on critical 45nm logic masks
2008
In the continuous battle to improve critical dimension (CD) uniformity, especially for 45-nanometer (nm) logic
advanced products, one important recent advance is the ability to accurately predict the mask CD uniformity
contribution to the overall global wafer CD error budget. In most wafer process simulation models, mask error
contribution is embedded in the optical and/or resist models. We have separated the mask effects, however, by
creating a short-range mask process model (MPM) for each unique mask process and a long-range CD
uniformity mask bias map (MBM) for each individual mask. By establishing a mask bias map, we are able to
incorporate the mask CD uniformity signature into our modelling simulations and measure the effects on global
wafer CD uniformity and hotspots. We also have examined several ways of proving the efficiency of this
approach, including the analysis of OPC hot spot signatures with and without the mask bias map (see Figure 1)
and by comparing the precision of the model contour prediction to wafer SEM images. In this paper we will
show the different steps of mask bias map generation and use for advanced 45nm logic node layers, along with
the current results of this new dynamic application to improve hot spot verification through Brion Technologies'
model-based mask verification loop.
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